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The Aluminum nitride ceramic wafer has a high thermal conductivity of more than 170W/m. K, high resistivity, low dielectric loss, good insulation, and some other excellent properties. The ALN substrate is the best choice for a wide range of industrial insulating heat sink material of high power machinery and equipment such as high-frequency equipment substrate, high power transistor module substrate, high-density hybrid circuits, microwave power devices, power semiconductor devices, power electronic devices, optoelectronic components, laser-semi-conductor, LED, IC products, and so on.
AlN substrate can be the best solution in electronics applications where strict conditions are required, such as power modules (MOSFET, IGBT), LED packages for cooling and protecting circuits, packages, and modules.
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