One of the key drivers of technology, especially for electronic devices, is the discovery of new materials that exhibit better properties. Component manufacturers, commercial research institutes, university laboratories, and governments are constantly looking for transformative materials to improve performance and/or reduce costs. One of the fruits of these efforts is silicon carbide semiconductor technology, which exhibits a number of favorable properties when compared to the silicon standard.
Silicon carbide semiconductor technology is transforming power electronics by delivering higher efficiency, greater power density, and superior thermal performance compared to traditional silicon. As designers push for more compact and efficient electronic systems, understanding silicon carbide (SiC) technology becomes critical for selecting the right components for demanding applications. The significance of SiC can be best appreciated by comparing it with silicon for important semiconductor properties, as shown below.
Data compiled from multiple semiconductor manufacturer specifications and industry studies.
As shown in the table above, SiC semiconductor properties make this material especially applicable for power electronics applications.
Silicon carbide’s crystal structure creates a wider bandgap than silicon, fundamentally changing how the material behaves electrically. This 3.26 eV bandgap enables SiC devices to withstand electric fields 10 times stronger than silicon before breakdown occurs. The material’s superior thermal properties allow SiC semiconductors to operate efficiently at temperatures exceeding 200°C, where silicon devices would fail. Combined with thermal conductivity 3.3 times higher than silicon, SiC devices dissipate heat more effectively, enabling smaller heatsinks and more compact designs.
The global silicon carbide semiconductor market reached $2.94 billion in 2024, and the projected growth is expected to climb to nearly $25 billion over the decade. The sectors that have benefited the most from this growth are:
This growth has been driven by forward-looking companies.
In the market, you will find many manufacturers who use SiC in their products. One of them is SMC Diodes Solutions, which produces semiconductor wafers based on silicon carbide. It is from these that SiC Schottky diodes are made, which represent a very attractive portfolio of semiconductor products from the manufacturer. These products exhibit high operating voltage, high current, small connector capacitance, and fast switching.
SMC diodes include components designed for through-hole mounting in popular package types like TO-247 and TO-220 (also in insulated versions). Surface-mount technology (SMT) diodes are also available. These include the DPAK and D2PAK packages, and in the case of SMC-branded diodes, the small DFN (Dual-Flat No-leads) with dimensions of 8 x 8mm and a thickness of 0.85mm. Additionally, the miniature SOD123F enclosure (dimensions approx. 0.08 x 0.15mm) with flat leads is also available.
Diodes are characterized by low voltage drop in the conduction direction and minimal reverse current. The use of silicon carbide enables these diodes to operate over a very wide temperature range from -55°C to 175°C. Additional important features are fast switching and very low energy loss at high signal frequencies. An example is the S4D02120F-SMC, which has a maximum reverse voltage of 1.2kV.
The utilization of silicon carbide semiconductor technology has allowed SMC to significantly expand its minimization diode and transistor products in the automotive (electric and hybrid vehicles, charging stations), photo
